doping profile

We have successfully developed a low noise high gain HFET with special doping profile sturcture and InGaAs/ GaAs two channels.

本文研究了具有InGaAs/GaAs双沟道和独特掺杂分布的低噪声高增益HFET。

An analytical breakdown model for thin epitaxial RESURF device with step doping profile drift is presented in this paper.

提出薄外延阶梯掺杂漂移区RESURF结构的耐压解析模型。

A new design of channel doping profile, called SCD, is also discussed here in detail.

另外，还讨论了一种新型的沟道掺杂设计，命名为SCD。

Doping Profile and I-V Characteristic Analysis for Hi-Lo GaAs IMPATT

GaAs高-低IMPATT二极管的掺杂分布和伏安特性分析

Simulation results show that the doping profile and width of P base region are important to the on-state voltage drop of Gate Controlled Thyristor.

模拟结果表明，P基区的掺杂浓度和宽度对门极换流晶闸管通态压降有着重要的影响。

High efficiency lnP Gunn diodes are fabricated using n~+-n-n~+ structure with specified doping profile.

用本方法生长的具有特殊掺杂分布的n~+-n-n~+外延InP，制得了高效率InP耿氏二极管。

An Analytical Model for Optimizing SOI High Voltage Device with Step Doping Profile in Drift Region

阶梯掺杂漂移区SOI高压器件浓度分布优化模型

Study on Doping Profile of GaAs Epilayer

GaAs外延层掺杂分布的研究

Measurement of the fine structure of semiconductor doping profile using C V technique

半导体掺杂分布精细结构的测量技术研究